PVT-MF-46F

Inductive Heating SIC Crystal Growing Furnace


Suitable for 6-inch and 8-inch conductive and high-purity semi-insulating SiC crystal growth, innovative structural design to provide high-purity material growth capability, with high-precision temperature and pressure control capabilities, excellent process performance, good equipment consistency, and rich experience in mass production.

Uniform Thermal Field


Continuously optimize the hot zone structure design through experiments to make the temperature gradient more uniform, reducing issues such as partly high temperatures and carbonization found in traditional hot zone.
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Product Features

 

Intelligent start-up

one-click intelligent start-up, reducing manual intervention and suitable for large-scale production

Wide range of applications

applicable to 6-inch and 8-inch, conductive/high-purity semi-insulating SiC crystal growth.

Professional design

Professional structural design to provide high purity material growth capability.

Suitable for long time, high temperature and low pressure

Suitable for long time, high temperature and low pressure processes, widening the process window for high quality and large scale crystal growth.

Multi-Auxiliary Equipment Support

Includes a wide range of auxiliary equipment, including high-capacity material synthesis furnaces, ingot annealing furnaces, and others.

Uniform Thermal Field

Continuously optimize the hot zone structure design through experiments to make the temperature gradient more uniform, reducing issues such as partly high temperatures and carbonization found in traditional hot zone.

Low Power Consumption

Integrated coil design reduces noise and lowers power consumption.

 


Technical Parameters


Model PVT-MF-46F
Dimensions: L x W x H 2100x1150x3500mm
Heating mode Induction heating
Optional Configuration Crucible rotation, dual temperature measurement points

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