EPI-MF-8
Horizontal Epitaxial Growth Furnace for SIC Substrate
High stability
Product Features
High speed and high quality
Using TCS as the silicon source can achieve high-quality and rapid epitaxy at a rate of up to 60um/h.
Uniformity and high yield
It can produce high-quality EPI with a doping uniformity of less than 5%, a thickness uniformity of less than 2%, and a DIE yield of more than 95%.
High stability
The horizontal equipment has a lower cost compared with the vertical equipment. At the same time, it has the characteristics of stable gas flow input and excellent PM performance.
Technical Parameters
| Model | EPI-MF-8 |
| Product specifications | Compatible with vapor phase deposition 6-8 inch SiC wafer |
| Process capabilities | It has the N-type and P-type doping processes, and the doping sources are optional |
| Temperature control range | ≤1700℃ |
| Temperature control accuracy | ±0.5℃ |
| Temperature during wafer transfer | 900℃ |
Related Products
Dalian Base: No. 30, Huantai West Street, Yingchengzi Industrial Park, Ganjingzi District, Dalian City
Wuxi Base: No. 15 Jinghong Road, Xishan District, Wuxi, Jiangsu Province
Tel: +86-510-68088419
Stock Code
920368
Dalian Base: No. 40 Yingri Road, Ganjingzi District, Dalian, Liaoning Province
Wuxi Base: No. 15 Jinghong Road, Xishan District, Wuxi, Jiangsu Province
Tel: +86-510-68088419
Stock Code
920368
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