03-05

SiC resistance heating crystal grower


Design advantages
1、Compact structure, side-by-side layout can be used to improve the utilization rate of the plant.
2、Satisfy 6-8 inch semi-insulating/conducting crystal growth needs.
3、PVT-RS-40 silicon carbide resistance heating crystal grower is suitable for growing high-quality 6-8 inch silicon carbide single crystal, high purity silicon carbide raw material synthesis, crystal annealing and other fields.

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