02-04-01

Crystal Grower KX360MCZ


Design Advantages
1、Application field: mild doped, magnetic control;
2、In the occurrence of abnormal crystal pulling processes such as loss of structure and silicon material recharging, the corresponding automatic process can be selected from the system to run;
3、Equipped with the international leading brand magnetic field, the central field strength can reach 4000GAUSS, and the magnetic field distribution is uniform, which is conducive to the growth of high-quality semiconductor crystals


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Main technical indicators

1. Model: KX360MCZ;

2. Inner diameter of furnace: Φ1400mm;

3. Diameter of crystal that can be pulled: Maximum 12 inches;

4. Size of heat field that can be installed: 36 inches;

5. Loading capacity: 650kg.

Design Advantages

1. Application field: mild doped, magnetic control;

2. In the occurrence of abnormal crystal pulling processes such as loss of structure and silicon material recharging, the corresponding automatic process can be selected from the system to run;

3. Equipped with the international leading brand magnetic field, the central field strength can reach 4000GAUSS, and the magnetic field distribution is uniform, which is conducive to the growth of high-quality semiconductor crystals

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