LQJD3010

SIC Diamond Wire Cutting Machine


Suitable for SIC crystal Cutting-off process

Ultra-high precision


Suitable for SIC crystal Cutting-off process
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Product Features

 

High line speed cutting

High line cutting speed of 30m/s, high cutting efficiency, high output ratio.

Multiple processing modes

Three processing modes,rotary, line swing and material swing.

Ultra-high precision

The TTV of the cut-off sample wafer is within 30μm.

Fine wire control

Stably use 0.18mm diamond wire, precise tension control, and excellent control of material loss.

Advanced controller

Uses the highest level of Huichuan IS810 series controller, equipped with 13 high-precision servo motors.

Vibration-damping design

The take-up and pay-off system is arranged on the left and right sides of the equipment, which effectively reduces the impact of vibration and greatly improves the processing accuracy.

 


Technical Parameters


Size range of SiC ingot Φ4~12 inch / 100mm
Average cutting speed 0.3mm/min
Cutting process setting steps ≥30 steps
Wire tension 0~110N (45N for 0.25um wire )
Wire Speed 0~30m/s
Diamond Wire Diameter ≥0.18mm
Wafer TTV ≤30μm
Equipment weight 5.5t
Tank volume 110L
Machine dimensions (L x W x H) 2370x2256x2080mm
Total Power 50kW
Cutting Breakage Rate ≤1% (except for human reasons, SiC material, wire, maintenance, etc.)

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