KX360MCZ

12-inch Czochralski Single Crystal Growing Furnace with Superconducting Magnetic Field


For 12-inch semiconductor grade silicon ingot growth

Structural stability


For 12-inch semiconductor grade silicon ingot growth
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Product Features

 

Structural stability

The structure of the equipment adopts finite element analysis design, higher safety and excellent operational stability and repeatability.

Clean chamber

The chamber is made of 316L stainless steel, 360° mirror surface polishing, clean and easy to clean to ensure the environment of high purity crystal growth.

Precise control

The use of advanced control algorithms and vision algorithms, the effective diameter control range up to the target diameter ± 0.05mm.

One-click operation

One-click hardware and software control logic, accurate protection monitoring and warning system to support the continued efficient and stable operation of the equipment.

Magnetic field compatibility

Hardware and software reserved interfaces are compatible with advanced superconducting level magnetic field from different vendors.

Accurate pressure

High-precision butterfly valve and mass flow meter with active self-cleaning exhaust gas filtration system, the chamber pressure can be controlled in a larger and more accurate range.

Adjustable heater

Equipped with heater lifting mechanism, providing more possibilities for process window adjustment (optional).

 

 

Technical Parameters


Model KX360MCZ
Chamber Diameter Φ1400mm
Height of secondary chamber 3500-5000mm(customizable)
Secondary chamber diameter Φ400mm
Field of application 300mm COP free Crystal Manufacturing
Maximum crystal body diameter 12 inch
Hot zone Size Min~32inch-Max~36inch
Type of magnetic field Horizontal superconducting magnetic field is standard, other types are available upon request.
Loading volume 650kg

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