Vertical induction furnace for silicon carbide synthesis
Suitable for the synthesis of high-purity SIC raw materials.
SIC Powder purity ≥6N.
Tubular SIC Powder Synthesis Furnace
Suitable for the synthesis of high-purity SIC raw materials.
SIC Powder purity ≥6N.
Electrical Resistance Heating SIC Crystal Growing Furnace
Used for 6/8/12 inch conductive and high purity semi-insulating SiC crystal growth, the multi-heater design allows flexible process and thermal field settings, the top loading structure enables convenient open-loading furnace and maintenance operations, while the equipment has high-precision temperature and pressure control capabilities, stable and excellent process performance.
Inductive Heating SIC Crystal Growing Furnace
Suitable for 6-inch and 8-inch conductive and high-purity semi-insulating SiC crystal growth, innovative structural design to provide high-purity material growth capability, with high-precision temperature and pressure control capabilities, excellent process performance, good equipment consistency, and rich experience in mass production.
Electrical Resistance Heating SIC Crystal Growth Furnace with Single Heater
Used for 6/8/12 inch conductive and high purity semi-insulating SiC crystal growth, the multi-heater design allows flexible process and hot zone options, the top loading structure enables convenient furnace loading and maintenance operations, while the equipment has high-precision temperature and pressure control capabilities, stable and excellent process performance.
Electrical Resistance Heating SIC Crystal Growth Furnace with Dual Heaters
Used for 6/8/12 inch conductive and high purity semi-insulating SiC crystal growth, the multi-heater design allows flexible process and hot zone options, the top loading structure enables convenient furnace loading and maintenance operations, while the equipment has high-precision temperature and pressure control capabilities with stable and excellent process performance.
Liquid Phase SIC Crystal Growing Furnace
Suitable for producing high quality 6-inch and 8-inch SIC crystal growth
Horizontal Epitaxial Growth Furnace for SIC Substrate
Suitable for producing high quality 6-inch and 8-inch SIC EPI
Annealing Furnace
Suitable for SIC crystal annealing process
SIC Diamond Wire Cutting Machine
Suitable for SIC crystal Cutting-off process
CNC Flat Grinding Machine
Suitable for SIC crystal Surface granding process
CNC Rolling and Grinding Machine
Suitable for SIC crystal body granding process
SIC Slicer
This product is a special processing equipment for cutting SIC wafers using diamond wire, and can process 6-inch and 8-inch wafers , with a maximum processing length of 300mm.